Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo, Matteo; Favero, D.; Marcuzzi, A.; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

doi:10.1109/ted.2023.3346369

articleIEEE Transactions on Electron DevicesJan 10, 2024HYBRID OA

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

MBMatteo Buffolo DFD. Favero AMA. Marcuzzi CDCarlo De Santi GMGaudenzio Meneghesso

University of Padua

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Abstract

We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Material properties and structural differences among GaN and SiC devices are first discussed. Based on the analysis of different commercially available GaN and SiC power transistors, we describe the state-of-the-art of these technologies, highlighting the preferential power conversion topologies and the key characteristics of each technological platform. Current and future fields of application for GaN and SiC devices are also reviewed. The article also reports on the main reliability aspects related to both technologies. For GaN…

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Topics

Keywords

Gallium nitride
Silicon carbide
Transistor
Power semiconductor device
Materials science
Robustness (evolution)
Reliability (semiconductor)
Power electronics

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