articleAdvanced Optical MaterialsJan 15, 2024BRONZE OA

Enhanced Performance of Gallium‐Based Wide Bandgap Oxide Semiconductor Heterojunction Photodetector for Solar‐Blind Optical Communication via Oxygen Vacancy Electrical Activity Modulation

CWChao WuTZTianli ZhaoHHHuaile HeHHHaizheng HuZLZeng Liu

Zhejiang Sci-Tech University · State Key Laboratory on Integrated Optoelectronics · +6 more institutions

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Abstract

Abstract Gallium oxide ( β ‐Ga 2 O 3 ) is a prominent representative of the new generation of wide‐bandgap semiconductors, boasting a bandgap of ≈4.9 eV. However, the growth process of β ‐Ga 2 O 3 materials introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hinders device performance. In this study, an innovative approach is successfully developed by introducing high p‐orbital energy nitrogen (N). This leads to the formation of a hybridized state with O 2p orbitals in β ‐Ga 2 O 3 , resulting in the creation of GaON and suppressing the electrical activity of Vo. Through meticulous experimentation and advanced computational methods, a…

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Topics & keywords

Topics
Keywords
  • Materials science
  • Optoelectronics
  • Photodetector
  • Passivation
  • Band gap
  • Gallium
  • Heterojunction
  • Semiconductor
UN Sustainable Development Goals
  • Affordable and clean energy
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