Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

Abstract Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi 2 Te 3 . This study highlights the potential of Ag 2 Se for wearable thermoelectric electronics, addressing the trade-off between performance and flexibility. A record-high ZT of 1.27 at 363 K is achieved in Ag 2 Se-based thin films with 3.2 at.% Te doping on Se sites, realized by a new concept of doping-induced orientation engineering. We reveal that Te-doping enhances film uniformity and (00 l )-orientation and in turn carrier mobility by reducing the (00 l ) formation energy, confirmed by solid computational and experimental evidence. The doping simultaneously widens the bandgap, resulting…

• NC
  National Computational Infrastructure
• AG
  Australian Government
• NN
  National Natural Science Foundation of China

  Award: 62274112
• SU
  Shenzhen University
• IF
  Institute for Future Environments, Queensland University of Technology
• BA
  Basic and Applied Basic Research Foundation of Guangdong Province

  Award: 2022A1515010929