Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control
Chinese Academy of Sciences · Institute of Physics · +6 more institutions
Abstract
Abstract Monolayer molybdenum disulfide (MoS 2 ), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS 2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS 2 monolayers on industry-compatible substrates of c -plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO 3 precursor ratio control. The…
Citation impact
- FWCI
- 15.87
- Percentile
- 100%
- References
- 57
Authors
30- LLLu LiCorresponding
Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences
- QWQinqin Wang
Chinese Academy of Sciences, Peking University, Collaborative Innovation Center of Quantum Matter, Institute of Physics, University of Chinese Academy of Sciences
- FWFanfan Wu
Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences
- QXQiaoling Xu
Songshan Lake Materials Laboratory, Sichuan Normal University
- JTJinpeng Tian
Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences
Topics & keywords
- Monolayer
- Wafer
- Materials science
- Epitaxy
- Optoelectronics
- Molybdenum disulfide
- Semiconductor
- Transistor