Ultra-fast switching memristors based on two-dimensional materials
The University of Texas at Austin · Birla Institute of Technology, Mesra · +1 more institution
Abstract
The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits. We employ statistical analysis of transient characteristics to gain insights into the…
Citation impact
- FWCI
- 36.13
- Percentile
- 100%
- References
- 77
Authors
13- SSS. S. Teja NibhanupudiCorresponding
The University of Texas at Austin
- ARAnupam Roy
Birla Institute of Technology, Mesra, The University of Texas at Austin
- DVDmitry Veksler
HRL Laboratories (United States)
- MCMatthew Coupin
The University of Texas at Austin
- KCKevin C. Matthews
The University of Texas at Austin
Topics & keywords
- Memristor
- Materials science
- Switching time
- Context (archaeology)
- CMOS
- Optoelectronics
- Nanotechnology
- Electronic circuit
- Affordable and clean energy