Super Broadband Emission Across NIR‐I and NIR‐II Under Blue Light Excitation of Cr 3+ , Ni 2+ Co‐Doped Sr 2 GaTaO 6 Phosphor Achieved by Two‐Site Occupation and Effective Energy Transfer

Abstract The performance of the near‐infrared phosphor‐converted light‐emitting diodes (NIR pc‐LEDs) mainly depends on the NIR emitting phosphors used. Cr 3+ doped materials can be excited by blue light chips, but their emission is located in the NIR‐I region (650–1000 nm). Ni 2+ doped materials are mainly located in the NIR‐II region (1000–1700 nm), but they cannot be effectively excited by blue light chips. Herein, Cr 3+ , Ni 2+ mono‐doped, and co‐doped Sr 2 GaTaO 6 NIR emitting phosphors are prepared and investigated. Cr 3+ and Ni 2+ ions occupy two octahedral sites of Ga 3+ and Ta 5+ . The co‐doping of Cr 3+ ions has achieved two breakthroughs. One is to shift the optimal excitation wavelength from violet…

• NN
  National Natural Science Foundation of China

  Awards: 52272142, 62127816