High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
Anhui University · Shanghai Fudan Microelectronics (China) · +2 more institutions
Abstract
Abstract With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO 2 (HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I ON /I OFF ) of over 10 8 , and high endurance up to 2×10 7 cycles. In addition, the FeFETs under different…
Citation impact
- FWCI
- 21.40
- Percentile
- 100%
- References
- 64
Authors
12- QLQingxuan LiCorresponding
Anhui University, Shanghai Fudan Microelectronics (China)
- SWSiwei Wang
Fudan University, Shanghai Fudan Microelectronics (China)
- ZLZhenhai Li
Fudan University, Shanghai Fudan Microelectronics (China)
- XHXuemeng Hu
Fudan University, Shanghai Fudan Microelectronics (China)
- YLYongkai Liu
Fudan University, Shanghai Fudan Microelectronics (China)
Topics & keywords
- Materials science
- Optoelectronics
- Ferroelectricity
- Transistor
- Indium tin oxide
- Bend radius
- Neuromorphic engineering
- Tin
- Affordable and clean energy