Local Electronic Structure Modulation of Interfacial Oxygen Vacancies Promotes the Oxygen Activation Capacity of Pt/Ce 1– x M x O 2−δ

The asymmetric oxygen vacancies on the surface of doped oxides and at the interface between the metal and oxide are commonly regarded as the real active sites for the molecular oxygen activation reaction, owing to their unique electronic perturbation properties. However, the essential rules for modulating the local electronic structure of oxygen vacancies to promote the oxygen activation capacity are still ambiguous. In this work, a series of interfacial oxygen vacancy sites, Pt/Ce–Ov–M (Ov, oxygen vacancy, M = Y, La, Pr, and Nd), with different local coordination environments were constructed based on Pt/Ce0.95M0.05O2−δ materials. The experimental data and theoretical calculation results prove that the…

• NN
  National Natural Science Foundation of China

  Awards: 22172081, U23A20125
• NU
  Nankai University

  Award: 21NKDYJS01
• NK
  National Key Research and Development Program of China

  Award: 2022YFC3901401
• FR
  Fundamental Research Funds for the Central Universities