Selenium-alloyed tellurium oxide for amorphous p-channel transistors
Northwestern University · Pohang University of Science and Technology · +4 more institutions
Abstract
Abstract Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. 1 ), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays 2–8 . However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal–oxide–semiconductor technology and integrated circuits 9–11 . Here we introduce a pioneering…
Citation impact
- FWCI
- 24.23
- Percentile
- 100%
- References
- 54
Authors
9- ALAo LiuCorresponding
Northwestern University, Pohang University of Science and Technology, University of Electronic Science and Technology of China
- YKYong‐Sung Kim
Korea Research Institute of Standards and Science, Korea University of Science and Technology
- MGMin Gyu Kim
Pohang University of Science and Technology
- YRYoujin Reo
Pohang University of Science and Technology
- TZTaoyu Zou
Pohang University of Science and Technology
Topics & keywords
- Materials science
- Thin-film transistor
- Optoelectronics
- Amorphous solid
- Semiconductor
- Tellurium
- Electron mobility
- Nanotechnology
- Industry, innovation and infrastructure
Funding
- NRNational Research FoundationAwards: 2021R1A2C3005401, BK21 FOUR
- NNNational Natural Science Foundation of ChinaAwards: 52372136, BK21 FOUR
- NRNational Research Foundation of KoreaAwards: NRF-2021R1A2C3005401, RS-2023-00260608, 2021R1A2C3005401
- NUNanjing University of Posts and Telecommunications
- NUNanjing University
- SSamsung