Oxygen Vacancies Trigger Rapid Charge Transport Channels at the Engineered Interface of S‐Scheme Heterojunction for Boosting Photocatalytic Performance

Abstract Although oxygen vacancies (Ovs) have been intensively studied in single semiconductor photocatalysts, exploration of intrinsic mechanisms and in‐depth understanding of Ovs in S‐scheme heterojunction photocatalysts are still limited. Herein, a novel S‐scheme photocatalyst made from WO 3 ‐Ov/In 2 S 3 with Ovs at the heterointerface is rationally designed. The microscopic environment and local electronic structure of the S‐scheme heterointerface are well optimized by Ovs. Femtosecond transient absorption spectroscopy (fs‐TAS) reveals that Ovs trigger additional charge movement routes and therefore increase charge separation efficiency. In addition, Ovs have a synergistic effect on the thermodynamic and…

• HK
  Hong Kong Polytechnic University

  Award: 1-ZE14
• IA
  Innovation and Technology Fund

  Award: GHP/040/19SZ
• SR
  Shenzhen Research Institute, City University of Hong Kong