Recent Advanced Ultra‐Wide Bandgap β‐Ga 2 O 3 Material and Device Technologies
Xidian University · King Abdulaziz University
Abstract
Abstract Gallium oxide (Ga 2 O 3 ) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (E g ) of 4.8 eV, high theoretical critical breakdown field strength (E C ) of 8 MV cm −1 , and saturation velocity (ν s ) of 2 × 10 7 cm s −1 , as well as high Baliga figures of merit (BFOM) of 3000. In addition, Ga 2 O 3 has the advantages of large‐size substrates that can be achieved by low‐cost melt‐grown techniques. This review provides a partial overview of pivotal milestones and recent advancements in the Ga 2 O 3 material growth and device performance.…
Citation impact
- FWCI
- 12.48
- Percentile
- 100%
- References
- 171
Authors
6Topics & keywords
- Materials science
- Band gap
- Optoelectronics
- Nanotechnology
- Engineering physics
- Engineering