Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing

The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization…

• CU
  Chinese University of Hong Kong

  Award: AoE/P-701/20
• BA
  Basic and Applied Basic Research Foundation of Guangdong Province

  Award: 2023B1515120049