Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the…

• NS
  National Science Foundation

  Awards: 2025158, DMR-1419807, 1809802, ECCS-2025158, 1419807, DMR-1809802
• UD
  U.S. Department of Energy

  Award: DE-SC0020149
• GA
  Gordon and Betty Moore Foundation

  Award: GBMF9463
• HU
  Harvard University
• MO
  Ministry of Education, Culture, Sports, Science and Technology

  Awards: 23H02052, 21H05233
• S
  Samsung
• OO
  Office of Science

  Award: DE-SC0020149
• MR
  Materials Research Science and Engineering Center, Harvard University

  Award: DMR-1419807
• MU
  Multidisciplinary University Research Initiative

  Award: FA9550-19-1-0390
• JS
  Japan Society for the Promotion of Science

  Award: 23H02052
• DO
  Division of Materials Research

  Awards: 1419807, DMR-1419807
• DO
  Division of Electrical, Communications and Cyber Systems

  Awards: ECCS-2025158, 2025158
• BE
  Basic Energy Sciences

  Award: DE-SC0020149
• AR
  Army Research Office

  Award: W911NF2120147