Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response

Abstract The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS 2 , metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption…

• NN
  National Natural Science Foundation of China

  Awards: 12327804, 52231007, T2321003, 22088101, 22269010