Non-volatile 2D MoS2/black phosphorus heterojunction photodiodes in the near- to mid-infrared region
Fudan University · State Key Laboratory of ASIC and System · +5 more institutions
Abstract
Abstract Cutting-edge mid-wavelength infrared (MWIR) sensing technologies leverage infrared photodetectors, memory units, and computing units to enhance machine vision. Real-time processing and decision-making challenges emerge with the increasing number of intelligent pixels. However, current operations are limited to in-sensor computing capabilities for near-infrared technology, and high-performance MWIR detectors for multi-state switching functions are lacking. Here, we demonstrate a non-volatile MoS 2 /black phosphorus (BP) heterojunction MWIR photovoltaic detector featuring a semi-floating gate structure design, integrating near- to mid-infrared photodetection, memory and computing (PMC) functionalities.…
Citation impact
- FWCI
- 12.10
- Percentile
- 100%
- References
- 42
Authors
10- YZYuyan ZhuCorresponding
Fudan University, State Key Laboratory of ASIC and System
- YWYang Wang
Shaoxing University, Fudan University, Shanghai Fudan Microelectronics (China), Shanghai Institute of Technical Physics, State Key Laboratory of ASIC and System
- XPXingchen Pang
Fudan University, State Key Laboratory of ASIC and System
- YJYongbo Jiang
Fudan University, State Key Laboratory of ASIC and System
- XLXiaoxian Liu
Fudan University, State Key Laboratory of ASIC and System
Topics & keywords
- Black phosphorus
- Heterojunction
- Photodiode
- Infrared
- Optoelectronics
- Phosphorus
- Materials science
- Environmental science
- Affordable and clean energy
Funding
- NNNational Natural Science Foundation of ChinaAwards: 62090032, 61925402, XDB44000000
- CAChinese Academy of SciencesAward: XDB44000000
- CPChina Postdoctoral Science Foundation
- SAScience and Technology Commission of Shanghai MunicipalityAward: 19JC1416600
- NPNational Postdoctoral Program for Innovative Talents
- NKNational Key Research and Development Program of ChinaAwards: 2021YFA1200500, 2023YFB3611400
- SIShanghai Institute of Technical Physics, Chinese Academy of SciencesAward: XDB44000000