Realizing high power factor and thermoelectric performance in band engineered AgSbTe2

AgSbTe2 is a promising p-type thermoelectric material operating in the mid-temperature regime. To further enhance its thermoelectric performance, previous research has mainly focused on reducing lattice thermal conductivity by forming ordered nanoscale domains for instance. However, the relatively low power factor is the main limitation affecting the power density of AgSbTe2-based thermoelectric devices. In this work, we demonstrate that hole-doped AgSbTe2 with Sn induces the formation of a new impurity band just above the valence band maximum. This approach significantly improves the electrical transport properties, contrary to previous strategies that focused on reducing lattice thermal conductivity. As a…

• NS
  National Science Foundation

  Award: 2039351
• UO
  University of Pennsylvania

  Award: 2DCC-MIP
• PS
  Pennsylvania State University

  Award: DMR-2039351
• NN
  National Natural Science Foundation of China

  Awards: 22209034, 12204156, No. 12204156, No. 22208293, 22208293
• CP
  China Postdoctoral Science Foundation

  Awards: 2023TQ0315, 2023M743224, No. 2023TQ0315 and 2023M743224
• WM
  Wenzhou Municipal Science and Technology Bureau

  Award: No. G20240034 and No. G20240041
• DO
  Division of Materials Research

  Awards: DMR-2039351, 2039351