articleNature CommunicationsJan 2, 2025GOLD OA

Harnessing orbital Hall effect in spin-orbit torque MRAM

RGRahul GuptaCBChloé BouardFKFabian KammerbauerJOJ. Omar Ledesma‐MartinABArnab Bose

Johannes Gutenberg University Mainz · University of Applied Sciences Mainz · +1 more institution

PubMed
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Abstract

Abstract Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching, long data retention, and high-density integration in SOT MRAM require ferromagnets (FM) with perpendicular magnetic anisotropy (PMA) combined with large torques enhanced by Orbital Hall Effect (OHE). We have engineered a PMA [Co/Ni] 3 FM on selected OHE layers (Ru, Nb, Cr) and investigated the potential of theoretically predicted larger orbital Hall conductivity (OHC) to quantify the torque and switching current in OHE/[Co/Ni] 3 stacks. Our results…

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Authors

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Topics & keywords

Topics
Keywords
  • Magnetoresistive random-access memory
  • Condensed matter physics
  • Torque
  • Materials science
  • Spin-transfer torque
  • Ferromagnetism
  • Magnetization
  • Optoelectronics
UN Sustainable Development Goals
  • Affordable and clean energy
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