g‐C 3 N 4 S‐Scheme Homojunction through Van der Waals Interface Regulation by Intrinsic Polymerization Tailoring for Enhanced Photocatalytic H 2 Evolution and CO 2 Reduction

Abstract The effective S‐scheme homojunction relies on the precise regulation of band structure and construction of advantaged charge migration interfaces. Here, the electronic structural properties of g‐C 3 N 4 were modulated through meticulous polymerization of self‐assembled supramolecular precursors. Experimental and DFT results indicate that both the intrinsic bandgap and surface electronic characteristics were adjusted, leading to the formation of an in‐situ reconstructed homojunction interface facilitated by intrinsic van der Waals forces. The homojunction catalyst, composed of g‐C 3 N 4 nanodots and ultra‐thin g‐C 3 N 4 nanoflakes, exhibited a significant S‐scheme carrier separation mechanism, which…

• NN
  National Natural Science Foundation of China

  Awards: 61804075, 22005123
• NS
  Natural Science Foundation of Shandong Province

  Award: ZR2023MB049