High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel

The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. Two-dimensional (2D) heterostructures provide an alternative path toward this goal, yet despite continued efforts, their performance has not matched that of low-temperature HgCdTe photodetectors. Here, we push the detectivity and response speed of a 2D heterostructure-based mid-infrared photodetector to be comparable to, and even superior to, commercial cooled HgCdTe…

• NN
  National Natural Science Foundation of China

  Awards: 62225404, 62375052, 12304481, T2222011, T2321002, 62174027
• GO
  Government of Jiangsu Province

  Award: BK20232044
• NS
  Natural Science Foundation of Jiangsu Province

  Awards: BK20240643, BK20222007, BK20232044, BK20210199
• NK
  National Key Research and Development Program of China

  Awards: 2023YFB3611400, 2022YFB4400100, 2021YFA1200700