Investigation of the Effect of Bonding Wires Degradation on Switching Stress Waves Released During Power Cycling in Discrete IGBT

Effective condition monitoring (CM) technology ensures the safe operation of insulated gate bipolar transistors (IGBTs). Most CM methods for IGBTs focus on extracting electrical, thermal, and magnetic parameters. Recent studies indicate that at the switching moment, IGBTs can emit the switching stress wave (SSW) that is detectable by the acoustic emission (AE) sensors. However, using these SSWs to monitor the health status of IGBTs, even for discrete devices with relatively simple package structures, remains challenging. This article investigates how SSWs from discrete IGBTs during power cycling change as bonding wires degrade and whether these waves are promising for monitoring the condition of internal…

• NN
  National Natural Science Foundation of China

  Award: 52077063
• CS
  Chengdu Science and Technology Program

  Award: JCYJ20220530160409022
• CA
  China Aerospace Science and Technology Innovation Fund

  Award: 2023RC1039