Enhancement of Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes Using Cooperative Scattering Structures on the n‐AlGaN Layer
Wuhan National Laboratory for Optoelectronics · Huazhong University of Science and Technology
Abstract
Abstract The efficiency of AlGaN based deep ultraviolet light‐emitting diode (DUV LEDs) are mainly hindered by the light extraction issue. In this work, an innovative cooperative scattering structure is introduced that combines a nanopore configuration with an aluminum (Al) nanoparticle array on the n‐AlGaN layer of the DUV LEDs. The integration of these two scattering arrays can enhance light extraction by mitigating total internal reflection at the device interface. The nanopores are formed on the n‐AlGaN surface by electrochemical etching and optimized by varying the etching voltage, while the Al particles are formed by thermal annealing. With the help of the cooperative scattering structure, the light…
Citation impact
- FWCI
- 48.25
- Percentile
- 100%
- References
- 33
Authors
14- ZCZhenyu Chen
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- SZShuang Zhang
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- YZYongming Zhao
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- ZWZhenzi Wu
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
- MCMaohua Chen
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
Topics & keywords
- Optoelectronics
- Materials science
- Layer (electronics)
- Ultraviolet
- Diode
- Light-emitting diode
- Extraction (chemistry)
- Light scattering