Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect

The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various emerging applications, especially in tiny micro-displays such as AR/VR. However, the conventional pixel definition based on plasma etching significantly damages the mesa sidewalls, leading to a severe reduction in efficiency as the micro-LED size decreases. This seriously impedes the development and application of micro-LEDs. In this work, we comprehensively explain the origin of micro-LED sidewall effects and corresponding physical models. Subsequently, we systematically review recent progress in micro-LED fabrication aiming at suppressing sidewall effects. Furthermore, we discuss advancements in micro-LED fabrication with…

• KA
  King Abdullah University of Science and Technology

  Awards: URF/1/5557-01-01, KAUST Near-term Grand Challenge Fund REI/1/4999-01-01, KAUST Baseline Fund BAS/1/1664-01-01, KAUST Impact Acceleration Fund REI/1/5124-01-01, BAS/1/1664-01-01