Pressure-Induced Engineering of Surface Oxygen Vacancies on Metal Oxides for Heterogeneous Photocatalysis
Fuzhou University · Chinese University of Hong Kong
Abstract
Oxygen vacancies (OVs) spatially confined on the surface of metal oxide semiconductors are advantageous for photocatalysis, in particular, for O2-involved redox reactions. However, the thermal annealing process used to generate surface OVs often results in undesired bulk OVs within the metal oxides. Herein, a high pressure-assisted thermal annealing strategy has been developed for selectively confining desirable amounts of OVs on the surface of metal oxides, such as tungsten oxide (WO3). Applying a pressure of 1.2 gigapascal (GPa) on WO3 induces significant lattice compression, which would strengthen the W–O bonds and increase the diffusion activation energy for the migration of the O migration. This…
Citation impact
- FWCI
- 17.33
- Percentile
- 100%
- References
- 54
Authors
12Topics & keywords
- Chemistry
- Photocatalysis
- Oxygen
- Metal
- Oxygen pressure
- Chemical engineering
- Catalysis
- Organic chemistry