A Review of Ga₂O₃ Heterojunctions for Deep‐UV Photodetection: Current Progress, Methodologies, and Challenges
Indexed incrossrefdoaj
Abstract
Abstract In recent years, gallium oxide (Ga 2 O 3 ) has drawn considerable research interest as an ultrawide‐bandgap semiconductor due to its promising applications in the power electronics, photodetection, and gas sensing. Moreover, Ga 2 O 3 heterojunctions have emerged as a promising approach to address key limitations of Ga 2 O 3 as a standalone material—most notably, its lack of p‐type doping capability. One of the key application areas for Ga 2 O 3 and its heterojunctions is ultraviolet (UV) photodetection, which has gained significant attention yet remains a relatively nascent field with vast potential for further exploration and optimization. This review provides a detailed overview of the current…
Citation impact
46
total citations
- FWCI
- 15.33
- Percentile
- 100%
- References
- 272
Citations per year
Authors
5Topics & keywords
Topics
Keywords
- Photodetection
- Materials science
- Heterojunction
- Optoelectronics
- Current (fluid)
- Nanotechnology
- Engineering physics
- Photodetector
No related works found for this paper.