Tunneling-barrier-controlled sensitive deep ultraviolet photodetectors based on van der Waals heterostructures

Deep ultraviolet (DUV) photodetection usually relies on wide-bandgap semiconductors, which however face challenges in material growth and doping processes. In this work, we proposed and validated a photodetection scheme based on tunneling barrier modulation, achieving highly sensitive DUV photodetection. Using a two-dimensional van der Waals heterostructure, the device integrates MoS2 as the transporting layer for its high carrier mobility and low dark current, few-layered graphene (FLG) as the photon absorption layer, and hexagonal boron nitride (hBN) as the dielectric barrier. The device exhibits an photoresponsivity of 4.4 × 106 A·W-1 and specific detectivity of 1.4 × 1017 $${{{\rm{cm}}}}\cdot…

• NN
  National Natural Science Foundation of China

  Award: 12204109