Gate‐Tunable Dual‐Mode Optoelectronic Device for Self‐Powered Photodetector and Optoelectronic Synapse
Aarhus University · University of Electronic Science and Technology of China · +1 more institution
Abstract
Abstract In the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate‐tunable dual‐mode optoelectronic device based on a MoTe 2 /MoS 2 van der Waals heterostructure, designed to operate as both a self‐powered photodetector and an optoelectronic synapse, is reported. The device leverages the photovoltaic effect in the MoTe 2 /MoS 2 PN junction for self‐powered photodetection and utilizes trapping states at the SiO 2 /MoS 2 interface to emulate synaptic behavior. Gate voltage modulation enables precise control of the device's band structure, facilitating seamless switching between these two operational modes.…
Citation impact
- FWCI
- 35.96
- Percentile
- 100%
- References
- 54
Authors
6- YOYi Ouyang
Aarhus University
- CZChaoyi Zhang
University of Electronic Science and Technology of China, Aarhus University
- JWJun Wang
University of Electronic Science and Technology of China
- ZGZheng GuoCorresponding
Aarhus University
- ZWZegao WangCorresponding
Sichuan University
Topics & keywords
- Photodetector
- Neuromorphic engineering
- Optoelectronics
- Photodetection
- Materials science
- Heterojunction
- Computer science
- Artificial neural network