Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing

Cui, Dongsheng; Pei, Mengjiao; Lin, Zhenhua; Zhang, Hong; Kang, Mengyang; Wang, Yifei; Gao, Xiangxiang; Su, Jie; Miao, Jinshui; Li, Yun; Zhang, Jincheng; Hao, Yue; Chang, Jingjing

doi:10.1038/s41377-025-01773-6

articleLight Science & ApplicationsApr 15, 2025GOLD OA

Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing

DCDongsheng Cui MPMengjiao Pei ZLZhenhua Lin HZHong Zhang MKMengyang Kang

Xidian University · Collaborative Innovation Center of Advanced Microstructures · +1 more institution

PubMed

Indexed incrossrefdoajpubmed

Abstract

Abstract Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga 2 O 3 photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance ( I cc ) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The “AND” and “OR” logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP),…

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56

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FWCI: 32.38
Percentile: 100%
References: 44

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Topics & keywords

Topics

Keywords

Neuromorphic engineering
Memristor
Materials science
Spike-timing-dependent plasticity
Computer science
Phototropin
Optoelectronics
Artificial neural network

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