Relaxor Antiferroelectric Dynamics for Neuromorphic Computing
Beijing Institute of Technology · Zhejiang University
Abstract
Relaxor antiferroelectric (AFE) materials display a gradual polarization response and high energy storage density with polarization slowly reverting after removing an external field. This distinctive polarization-switching behavior closely resembles synaptic plasticity in biological nervous systems, presenting substantial potential for neuromorphic computing applications. Especially, its 2D scenario exhibits unique physical properties and maintains stability at atomic thickness due to their antipolar alignment, which effectively eliminates the depolarization field effect. Such stable 2D relaxor AFE materials offer significant advantages for integrating these materials into modern electronic devices for…
Citation impact
- FWCI
- 34.69
- Percentile
- 100%
- References
- 70
Authors
17- DYDongliang Yang
Beijing Institute of Technology
- YLYinan Lin
Beijing Institute of Technology
- WMWeifan Meng
Beijing Institute of Technology
- ZWZhongyi Wang
Zhejiang University
- HLHuihan Li
Beijing Institute of Technology
Topics & keywords
- Neuromorphic engineering
- Materials science
- Antiferroelectricity
- Memristor
- Optoelectronics
- Computer science
- Nanotechnology
- Artificial neural network