articleAdvanced MaterialsApr 24, 2025Closed access

Relaxor Antiferroelectric Dynamics for Neuromorphic Computing

Beijing Institute of Technology · Zhejiang University

PubMed
Indexed incrossrefpubmed

Abstract

Relaxor antiferroelectric (AFE) materials display a gradual polarization response and high energy storage density with polarization slowly reverting after removing an external field. This distinctive polarization-switching behavior closely resembles synaptic plasticity in biological nervous systems, presenting substantial potential for neuromorphic computing applications. Especially, its 2D scenario exhibits unique physical properties and maintains stability at atomic thickness due to their antipolar alignment, which effectively eliminates the depolarization field effect. Such stable 2D relaxor AFE materials offer significant advantages for integrating these materials into modern electronic devices for…

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60
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FWCI
34.69
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100%
References
70
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Authors

17

Topics & keywords

Keywords
  • Neuromorphic engineering
  • Materials science
  • Antiferroelectricity
  • Memristor
  • Optoelectronics
  • Computer science
  • Nanotechnology
  • Artificial neural network
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