Reversible manipulation of field-free perpendicular magnetization switching via electric field

Electric-field control of magnetization switching holds great promise for the development of spintronic devices due to its intrinsically low power consumption. Here, we demonstrate the efficient and reversible manipulation of field-free perpendicular magnetization switching through the electric-field driven migration of oxygen ions within the Pt/Co/CuOx/MoOx system. The antiferromagnetic CoO layer at the Co/CuOx interface modulated by the gate voltage provides an exchange bias field, enabling field-free current-driven magnetization switching. The field-free switching ratio can be effectively enhanced by applying a negative gate voltage, with the maximum value being 62.7%, which is five times larger than that…

• NN
  National Natural Science Foundation of China

  Awards: U24A6002, 52171183, 12174237