Low‐Temperature Synthesis of Wafer‐Scale 2D Topological Semimetal NiTe 2 for High‐Efficiency Broadband Photodetection and Imaging
Zhengzhou University · Ningbo Institute of Industrial Technology
Abstract
Abstract 2D semimetals have demonstrated tremendous potential in broadband photodetection owing to their unique gapless electronic structure, high carrier mobility, and topological surface states. Nevertheless, complementary metal oxide semiconductor (CMOS)‐compatible low‐temperature synthesis of these materials with large area and precise thickness control remains a critical challenge. In this study, wafer‐scale 2D topological semimetal NiTe 2 films with excellent crystallinity and uniformity are successfully synthesized via an in situ metal‐conversion technique at a low temperature of 300 °C. Based on this, NiTe 2 /Si heterojunction photodetector is constructed, achieving broadband self‐powered…
Citation impact
- FWCI
- 17.44
- Percentile
- 100%
- References
- 65
Authors
8Topics & keywords
- Photodetection
- Broadband
- Wafer
- Optoelectronics
- Semimetal
- Scale (ratio)
- Materials science
- Physics