W-Shaped Antiambipolar Transistors Based on h-BN/MoTe 2 /BP Heterostructures
Tianjin University · Tiangong University · +4 more institutions
Abstract
The development of multifunctional device architectures capable of integrating logic, analog, and optoelectronic functions is critical for overcoming the scaling and energy efficiency limitations of conventional CMOS technologies. Antiambipolar transistors (AATs), with their nonmonotonic transfer characteristics and central Λ-shaped region, provide an attractive platform for implementing multivalued logic operations, compact frequency multipliers, and photodetectors. Here, we present a high-performance W-shaped AAT based on an h-BN/MoTe2/BP van der Waals heterostructure. The device exhibits four discrete conductance states and a symmetric Λ-region centered at Vgs = 0 V, with a high on/off current ratio…
Citation impact
- FWCI
- 22.25
- Percentile
- 100%
- References
- 50
Authors
9- EWEnxiu WuCorresponding
Tianjin University, Tiangong University, Research Institute of Precision Instruments (Russia)
- YMYuexuan Ma
Tianjin University, Research Institute of Precision Instruments (Russia)
- QTQijia Tian
Tianjin University, Research Institute of Precision Instruments (Russia)
- ZWZhiyuan Wang
Tianjin University, Research Institute of Precision Instruments (Russia)
- ZSZhaoqi Song
Tianjin University, Research Institute of Precision Instruments (Russia)
Topics & keywords
- Photocurrent
- Rectification
- Photodetector
- Heterojunction
- Transistor
- Ternary operation
- Dark current
- Inverter
Funding
- NNNational Natural Science Foundation of ChinaAwards: 62304151, 62474124, 62204170
- CPChina Postdoctoral Science FoundationAward: 2023M742585
- NSNatural Science Foundation of Tianjin CityAward: 22JCQNJC01010
- SKState Key Laboratory of Fluid Power and Mechatronic SystemsAward: GZKF-202327
- SLSongshan Lake Materials LaboratoryAward: 2023SLABFK07