Photon‐Energy‐Gated Carrier Accumulation in Ordered Core–Shell Nanowires for Neuromorphic Photodetection and Memory
Changchun University of Science and Technology · Integrated Optoelectronics (Norway) · +1 more institution
Abstract
ABSTRACT Engineering semiconductor heterojunctions is a pivotal research frontier for developing next‐generation optoelectronic devices, particularly for neuromorphic computing. However, performing precise, stimulus‐selective control over interfacial carrier dynamics to unlock advanced memory and logic functions remains a significant challenge. Herein, we unveil a novel “photon‐energy‐gated selective carrier accumulation” mechanism within macroscopically ordered ZnO/Ga 2 O 3 core–shell nanowire heterojunctions, governed by the Type‐I band alignment at the heterointerface. This unique architecture, fabricated via a super‐aligned carbon nanotube template, not only boosts the UV photoresponsivity by 78‐fold…
Citation impact
- FWCI
- 81.64
- Percentile
- 100%
- References
- 56
Authors
7- ZGZhenwei Guo
Changchun University of Science and Technology
- YHYue He
Changchun University of Science and Technology
- HWHaoming WeiCorresponding
Changchun University of Science and Technology, Integrated Optoelectronics (Norway)
- DJDayong JiangCorresponding
Changchun University of Science and Technology, Integrated Optoelectronics (Norway)
- MZMan Zhao
Changchun University of Science and Technology, Integrated Optoelectronics (Norway)
Topics & keywords
- Neuromorphic engineering
- Photodetection
- Nanowire
- Heterojunction
- Photonics
- Semiconductor
- Charge carrier
Funding
- NNNational Natural Science Foundation of ChinaAward: 62274016
- KTKey Technologies Research and Development ProgramAward: 2022YFA1203400
- NKNational Key Research and Development Program of ChinaAward: 2022YFA1203400
- JSJilin Scientific and Technological Development ProgramAward: YDZJ202401562ZYTS
- SPSpecial Project for Research and Development in Key areas of Guangdong ProvinceAward: 2020B010169001