Optimization of factors influencing microwave plasma modification of single-crystal SiC (0001)
Zhejiang University of Technology · Sun Yat-sen University · +2 more institutions
Indexed incrossref
Abstract
No abstract available for this paper.
Citation impact
5
total citations
- FWCI
- 63.90
- Percentile
- 100%
- References
- 25
Too recent for citation history.
Authors
8Topics & keywords
Topics
Keywords
- Microwave
- Multiphysics
- Silicon carbide
- Surface modification
- Polishing
- Volumetric flow rate
- Surface roughness
- Plasma processing
No related works found for this paper.
Funding
- NNNational Natural Science Foundation of ChinaAwards: 52275467, 52375468
- ZUZhejiang University of TechnologyAward: 2022JCY09
- NKNational Key Research and Development Program of ChinaAward: 2023YFE0202900
- SAScience and Technology Plan Project of TaizhouAward: 24gya07
- BABasic and Applied Basic Research Foundation of Guangdong ProvinceAward: 2024B1515120011
- NSNatural Science Foundation of Zhejiang ProvinceAwards: LR25E040001, LY21E050011, LZY23E050004
- FRFundamental Research Funds for the Provincial Universities of ZhejiangAward: RF-A2022002