Thermodynamic Mechanisms of Co‐S Bond Anchoring in Few‐Layered 1T ‐ MoS 2 for Enhanced Capacitive Performance via Spin State Regulation and Ion Diffusion Kinetics

Few‐layered 1T‐MoS 2 is highly promising for supercapacitor applications due to its wide interlayer spacing, high electrical conductivity, and abundant active sites. However, its poor structural stability greatly challenges the synthesis of stable 1T‐MoS 2 . This study systematically investigates the dual‐function mechanism of cobalt (Co) doping in few‐layered MoS 2 . Co is successfully doped into MoS 2 to fabricate stable 1T‐MoS 2 by a simple synthesis approach. The formation of Co‐S bonds during doping plays a critical role in stabilizing the 1T phase. Furthermore, Co doping deliberately induces defects in the MoS 2 lattice. The defects modify the electronic structure, increasing the density of states near…

• NN
  National Natural Science Foundation of China

  Awards: 22078184, 22378249
• MS
  Major Science and Technology Projects in Anhui Province

  Award: 202305a12020006