Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide
Beijing National Laboratory for Molecular Sciences · Peking University · +2 more institutions
Abstract
Ferroelectrics have great potential for nonvolatile memory and next-generation electronics, but conventional ferroelectric oxide films generally suffer structural nonuniformity, interfacial depolarization, and performance degradation, particularly when downscaled to advanced technology nodes. We demonstrate uniform, wafer-scale synthesis and back-end-of-line–compatible integration of ultrathin van der Waals (vdW) high-dielectric constant ferroelectric oxide Bi 2 SeO 5 , retaining an optimal coercive field and robust ferroelectricity at monolayer thickness. Ultrathin vdW ferroelectric oxides formed atomically uniform interfaces with two-dimensional semiconductors and yielded ferroelectric field-effect…
Citation impact
- FWCI
- 61.26
- Percentile
- 100%
- References
- 210
Authors
21- QWQinci WuCorresponding
Beijing National Laboratory for Molecular Sciences
- ZLZhongrui LiCorresponding
Beijing National Laboratory for Molecular Sciences
- BHBingchen HanCorresponding
Peking University, Beijing National Laboratory for Molecular Sciences
- WSWeiyu SunCorresponding
Peking University, Beijing National Laboratory for Molecular Sciences
- QLQinyun LiuCorresponding
Peking University
Topics & keywords
- Ferroelectricity
- van der Waals force
- Non-volatile memory
- Monolayer
- Transistor
- Oxide
- Voltage
- Field-effect transistor
- Affordable and clean energy
Funding
- NNNational Natural Science Foundation of ChinaAwards: 52021006, 52350209, T2588301, 22373006, 22432001
- MOMinistry of Science and Technology of the People's Republic of ChinaAward: 2022YFA1204900
- ISIsrael Science FoundationAwards: 2932/21, 2974/23
- BNBeijing National Laboratory for Molecular SciencesAward: BNLMS-CXTD-202001