Comparative Electrical and Photoresponse Investigation of the Au/PVA/n - Si ( MPS1 ) and Au/(CdTe:PVA)/n-Si ( MPS2 ) Photodiodes, Both in the Dark and under Illumination
Gazi University · Applied Photonics (United Kingdom) · +3 more institutions
Abstract
In this current article, Au/n-Si (metal/semiconductor) MS devices with high-purity poly(vinyl alcohol) (PVA) (99+% hydrolyzed) (MPS1) and Au/(CdTe:PVA)/n-Si (metal/polymer/semiconductor) (MPS2) are grown on the same n-type Si wafer by using the spin-coating technique and determine their effects on light sensitivity and basic electronic parameters like saturation current (I0), which is derived from the straight-line intercept of ln(I) at V = 0, zero-bias barrier height (ϕb0) at V = 0, ideality/quality factor (n), and both the shunt/series resistances (Rs, Rsh). For this purpose, the current–voltage (I–V) measurement is carried out over a wide voltage range (±4.5 V), both in the dark and under 100 mW/cm2…
Citation impact
- FWCI
- 75.22
- Percentile
- 100%
- References
- 39
Authors
4Topics & keywords
- Photodiode
- Dark current
- Saturation current
- Photodetector
- Saturation (graph theory)
- Wafer
- Voltage
- Sensitivity (control systems)
- Affordable and clean energy