Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics

Abstract Current crystalline thin-film production techniques typically require specific growth substrates, posing significant challenges for their use in flexible electronics and integrated optoelectronics. In response to these challenges, we introduce a novel method called ‘induced fit growth’, inspired by the induced fit theory in molecular biology. This method overcomes the limitations of current techniques by enabling the deposition of Ga-based semiconductor films, including GaSb, GaSe, GaAs, and GaAsSb, with controllable thickness and morphology on arbitrary substrates. Utilizing a low-cost, wafer-scale vapor deposition process compatible with standard semiconductor procedures, these Ga-based films can be…

• CU
  City University of Hong Kong

  Award: RFS2021-1S04
• NN
  National Natural Science Foundation of China

  Award: 61904096
• RG
  Research Grants Council, University Grants Committee

  Award: CityU RFS2021-1S04
• NS
  Natural Science Foundation of Shandong Province

  Awards: ZR2022JQ05, ZR2024MF010