Robust room-temperature ferroelectricity in the wide-bandgap semiconductor Ga 2 O 3

For decades, the integration of power handling and nonvolatile memory has been fundamentally impeded by the incompatibility between wide-bandgap semiconductors and ferroelectric materials. We resolve this challenge by demonstrating robust room-temperature ferroelectricity in epitaxial metastable κ-Ga 2 O 3 , grown via industry-compatible metal-organic chemical vapor deposition, creating an intrinsically ferroelectric wide-bandgap semiconductor. Through systematic characterization including piezoresponse force microscopy, polarization hysteresis measurements, and positive up–negative down tests, we provide conclusive evidence of stable ferroelectric switching down to 5-nanometer thickness—exceeding conventional…

• NN
  National Natural Science Foundation of China

  Awards: 12274243, 52233014, 12474065
• FR
  Fundamental Research Funds for the Central Universities

  Award: BUPT, 2023ZCJH1