An Accurate Datasheet-Driven Analytical Model of SiC MOSFET Incorporating Stage-Dominant C gs ( V gs , V d s ) and C gd ( V gs , V d s )

SiC MOSFET analytical models demonstrate higher computational efficiency and simpler implementation than physical/behavioral models. However, existing analytical models fail to properly account for Vgs-dependent Cgs/Cgd dynamics, causing significant errors in switching waveform predictions and switching characteristic parameters (dids/dt, dvds/dt and tdelay). Current SiC MOSFET analytical models implement Cgs and Cgd characterization through either lookup tables or parameterized mathematical expressions, where certain parameters require additional experimental data. This paper presents an accurate analytical model for SiC MOSFETs. This model provides physics-based expressions for Cgs(Vgs,Vds) and Cgd(Vgs,Vds),…